Analytical model for the surface field distribution of SOI RESURF devices
An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the leng...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 1998-06, Vol.45 (6), p.1374-1376 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1376 |
|---|---|
| container_issue | 6 |
| container_start_page | 1374 |
| container_title | IEEE transactions on electron devices |
| container_volume | 45 |
| creator | Chung, Sang-Koo Han, Seung-Youp |
| description | An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results. |
| doi_str_mv | 10.1109/16.678582 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_16_678582</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>678582</ieee_id><sourcerecordid>26666138</sourcerecordid><originalsourceid>FETCH-LOGICAL-c405t-4cc40f8a867f42f5f03b554fd67f7429ff67cb1bcd27100550ce6ea61c9f592a3</originalsourceid><addsrcrecordid>eNqNkM9LwzAYhoMoOKcHr55yEjx0Jml-9TjGpoPBYHPnkKZfMNKtM2mF_fdWOrzqd3l5eR--w4PQPSUTSknxTOVEKi00u0AjKoTKCsnlJRoRQnVW5Dq_RjcpffRVcs5GaDk92PrUBmdrvG8qqLFvIm7fAacueusA-wB1hauQ2hjKrg3NATceb9dLvJlvd5sFruArOEi36MrbOsHdOcdot5i_zV6z1fplOZuuMseJaDPu-vTaaqk8Z154kpdCcF_1XXFWeC-VK2npKqYoIUIQBxKspK7womA2H6PH4e8xNp8dpNbsQ3JQ1_YATZcM04XiUrN_gJzlVJG_Qdkf7d2N0dMAutikFMGbYwx7G0-GEvOj31BpBv09-zCwAQB-ufP4DSfKfjY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26666138</pqid></control><display><type>article</type><title>Analytical model for the surface field distribution of SOI RESURF devices</title><source>IEEE Electronic Library (IEL)</source><creator>Chung, Sang-Koo ; Han, Seung-Youp</creator><creatorcontrib>Chung, Sang-Koo ; Han, Seung-Youp</creatorcontrib><description>An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.678582</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Dielectric constant ; Dielectric measurements ; Numerical simulation ; Position measurement ; Semiconductor diodes ; Semiconductor films ; Silicon on insulator technology ; Thickness measurement ; Voltage</subject><ispartof>IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1374-1376</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c405t-4cc40f8a867f42f5f03b554fd67f7429ff67cb1bcd27100550ce6ea61c9f592a3</citedby><cites>FETCH-LOGICAL-c405t-4cc40f8a867f42f5f03b554fd67f7429ff67cb1bcd27100550ce6ea61c9f592a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/678582$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/678582$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chung, Sang-Koo</creatorcontrib><creatorcontrib>Han, Seung-Youp</creatorcontrib><title>Analytical model for the surface field distribution of SOI RESURF devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.</description><subject>Analytical models</subject><subject>Dielectric constant</subject><subject>Dielectric measurements</subject><subject>Numerical simulation</subject><subject>Position measurement</subject><subject>Semiconductor diodes</subject><subject>Semiconductor films</subject><subject>Silicon on insulator technology</subject><subject>Thickness measurement</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkM9LwzAYhoMoOKcHr55yEjx0Jml-9TjGpoPBYHPnkKZfMNKtM2mF_fdWOrzqd3l5eR--w4PQPSUTSknxTOVEKi00u0AjKoTKCsnlJRoRQnVW5Dq_RjcpffRVcs5GaDk92PrUBmdrvG8qqLFvIm7fAacueusA-wB1hauQ2hjKrg3NATceb9dLvJlvd5sFruArOEi36MrbOsHdOcdot5i_zV6z1fplOZuuMseJaDPu-vTaaqk8Z154kpdCcF_1XXFWeC-VK2npKqYoIUIQBxKspK7womA2H6PH4e8xNp8dpNbsQ3JQ1_YATZcM04XiUrN_gJzlVJG_Qdkf7d2N0dMAutikFMGbYwx7G0-GEvOj31BpBv09-zCwAQB-ufP4DSfKfjY</recordid><startdate>19980601</startdate><enddate>19980601</enddate><creator>Chung, Sang-Koo</creator><creator>Han, Seung-Youp</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980601</creationdate><title>Analytical model for the surface field distribution of SOI RESURF devices</title><author>Chung, Sang-Koo ; Han, Seung-Youp</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-4cc40f8a867f42f5f03b554fd67f7429ff67cb1bcd27100550ce6ea61c9f592a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Analytical models</topic><topic>Dielectric constant</topic><topic>Dielectric measurements</topic><topic>Numerical simulation</topic><topic>Position measurement</topic><topic>Semiconductor diodes</topic><topic>Semiconductor films</topic><topic>Silicon on insulator technology</topic><topic>Thickness measurement</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chung, Sang-Koo</creatorcontrib><creatorcontrib>Han, Seung-Youp</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chung, Sang-Koo</au><au>Han, Seung-Youp</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analytical model for the surface field distribution of SOI RESURF devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1998-06-01</date><risdate>1998</risdate><volume>45</volume><issue>6</issue><spage>1374</spage><epage>1376</epage><pages>1374-1376</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.</abstract><pub>IEEE</pub><doi>10.1109/16.678582</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1374-1376 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_678582 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Dielectric constant Dielectric measurements Numerical simulation Position measurement Semiconductor diodes Semiconductor films Silicon on insulator technology Thickness measurement Voltage |
| title | Analytical model for the surface field distribution of SOI RESURF devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T19%3A18%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analytical%20model%20for%20the%20surface%20field%20distribution%20of%20SOI%20RESURF%20devices&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Chung,%20Sang-Koo&rft.date=1998-06-01&rft.volume=45&rft.issue=6&rft.spage=1374&rft.epage=1376&rft.pages=1374-1376&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/16.678582&rft_dat=%3Cproquest_RIE%3E26666138%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26666138&rft_id=info:pmid/&rft_ieee_id=678582&rfr_iscdi=true |