Analytical model for the surface field distribution of SOI RESURF devices

Analytical model for the surface field distribution of SOI RESURF devices

An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the leng...

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Veröffentlicht in:IEEE transactions on electron devices 1998-06, Vol.45 (6), p.1374-1376
Hauptverfasser: Chung, Sang-Koo, Han, Seung-Youp
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Dielectric constant
Dielectric measurements
Numerical simulation
Position measurement
Semiconductor diodes
Semiconductor films
Silicon on insulator technology
Thickness measurement
Voltage
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Beschreibung
Zusammenfassung:An analytical model is presented to determine the electric field distribution along the semiconductor surface of silicon-on-insulator (SOI) REduced SURface Field (RESURF) devices, which allows an approximate but explicit expression for the surface field in terms of the doping concentration, the lengths of the gate and drain field plate, the thicknesses of the gate and buried oxide, and the applied voltages. Numerical simulations support the analytical results.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.678582