Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors

Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors

This paper experimentally determines and compares the 1/f noise and the g-r noise, as components of the base noise current spectral density, in Si homojunction and III-V heterojunction bipolar transistors (HBTs) in common-emitter configuration. The noise spectra for each of these devices are obtaine...

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Veröffentlicht in:IEEE transactions on electron devices 1996-05, Vol.43 (5), p.784-792
Hauptverfasser: Kirtania, A.K., Das, M.B., Chandrasekhar, S., Lunardi, L.M., Qua, G.J., Hamm, R.A., Li-Wu Yang
Format: Artikel
Sprache:eng
Schlagworte:
Current density
Gallium arsenide
Heterojunction bipolar transistors
III-V semiconductor materials
Indium gallium arsenide
Indium phosphide
Noise level
Noise measurement
Silicon devices
Testing
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Zusammenfassung:This paper experimentally determines and compares the 1/f noise and the g-r noise, as components of the base noise current spectral density, in Si homojunction and III-V heterojunction bipolar transistors (HBTs) in common-emitter configuration. The noise spectra for each of these devices are obtained as functions of the base bias current (I/sub B/), and the 1/f noise has been found to depend on I/sub B/ as I/sub B//sup /spl gamma//, where /spl gamma//spl sim/1.8 for the silicon BJT's and InP/InGaAs HBT's with high current gains (/spl beta//spl sim/50), and /spl gamma//spl sim/1.1 for the AlGaAs/GaAs HBTs with low current gains (4
ISSN:0018-9383
1557-9646
DOI:10.1109/16.491256