Effects of source/drain implants on short-channel MOSFET I-V and C-V characteristics

The effects of source/drain implants on n-channel MOSFET I-V and C-V characteristics are measured and compared for the lightly doped drain (LDD) and the large-angle-tilt implanted drain (LATID) devices. We show that despite substantial improvement in hot-carrier reliability for LATID devices, the LATID design might have a limited range of application for short-channel MOSFETs. This is because as a result of enhanced V/sub TH/ roll-off and increased overlap capacitance for the LATID devices compared to LDD devices, the device/circuit performance degrades. The degradation of performance becomes more pronounced as device length is reduced. These results are confirmed by both experimental data and 2-dimensional numerical simulations.< >