A 12-ns low-temperature DRAM
A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported...
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| Veröffentlicht in: | IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1414-1422 |
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| container_end_page | 1422 |
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| container_issue | 8 |
| container_start_page | 1414 |
| container_title | IEEE transactions on electron devices |
| container_volume | 36 |
| creator | Henkels, W.H. Lu, N.C.C. Hwang, W. Rajeevakumar, T.V. Franch, R.L. Jenkins, K.A. Bucelot, T.J. Heidel, D.F. Immediato, M.J. |
| description | A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< > |
| doi_str_mv | 10.1109/16.30953 |
| format | Article |
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Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.30953</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>360603 - Materials- Properties ; 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) ; Applied sciences ; BEAMS ; Circuit noise ; Circuit testing ; CMOS technology ; Costs ; Design. Technologies. Operation analysis. Testing ; ELECTRON BEAMS ; Electronics ; ELEMENTS ; ENGINEERING ; Error analysis ; Exact sciences and technology ; Integrated circuits ; LEPTON BEAMS ; LOW TEMPERATURE ; MATERIALS SCIENCE ; MOS TRANSISTORS ; NITROGEN ; NOISE ; NONMETALS ; OPERATION ; PARTICLE BEAMS ; Random access memory ; SEMICONDUCTOR DEVICES ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< ></description><subject>360603 - Materials- Properties</subject><subject>426000 - Engineering- Components, Electron Devices & Circuits- (1990-)</subject><subject>Applied sciences</subject><subject>BEAMS</subject><subject>Circuit noise</subject><subject>Circuit testing</subject><subject>CMOS technology</subject><subject>Costs</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>ELECTRON BEAMS</subject><subject>Electronics</subject><subject>ELEMENTS</subject><subject>ENGINEERING</subject><subject>Error analysis</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>LEPTON BEAMS</subject><subject>LOW TEMPERATURE</subject><subject>MATERIALS SCIENCE</subject><subject>MOS TRANSISTORS</subject><subject>NITROGEN</subject><subject>NOISE</subject><subject>NONMETALS</subject><subject>OPERATION</subject><subject>PARTICLE BEAMS</subject><subject>Random access memory</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>ELECTRON BEAMS</topic><topic>Electronics</topic><topic>ELEMENTS</topic><topic>ENGINEERING</topic><topic>Error analysis</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>LEPTON BEAMS</topic><topic>LOW TEMPERATURE</topic><topic>MATERIALS SCIENCE</topic><topic>MOS TRANSISTORS</topic><topic>NITROGEN</topic><topic>NOISE</topic><topic>NONMETALS</topic><topic>OPERATION</topic><topic>PARTICLE BEAMS</topic><topic>Random access memory</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>Thermal conductivity</topic><topic>TRANSISTORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Henkels, W.H.</creatorcontrib><creatorcontrib>Lu, N.C.C.</creatorcontrib><creatorcontrib>Hwang, W.</creatorcontrib><creatorcontrib>Rajeevakumar, T.V.</creatorcontrib><creatorcontrib>Franch, R.L.</creatorcontrib><creatorcontrib>Jenkins, K.A.</creatorcontrib><creatorcontrib>Bucelot, T.J.</creatorcontrib><creatorcontrib>Heidel, D.F.</creatorcontrib><creatorcontrib>Immediato, M.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>OSTI.GOV</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Henkels, W.H.</au><au>Lu, N.C.C.</au><au>Hwang, W.</au><au>Rajeevakumar, T.V.</au><au>Franch, R.L.</au><au>Jenkins, K.A.</au><au>Bucelot, T.J.</au><au>Heidel, D.F.</au><au>Immediato, M.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 12-ns low-temperature DRAM</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1989-08-01</date><risdate>1989</risdate><volume>36</volume><issue>8</issue><spage>1414</spage><epage>1422</epage><pages>1414-1422</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.30953</doi><tpages>9</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1989-08, Vol.36 (8), p.1414-1422 |
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| subjects | 360603 - Materials- Properties 426000 - Engineering- Components, Electron Devices & Circuits- (1990-) Applied sciences BEAMS Circuit noise Circuit testing CMOS technology Costs Design. Technologies. Operation analysis. Testing ELECTRON BEAMS Electronics ELEMENTS ENGINEERING Error analysis Exact sciences and technology Integrated circuits LEPTON BEAMS LOW TEMPERATURE MATERIALS SCIENCE MOS TRANSISTORS NITROGEN NOISE NONMETALS OPERATION PARTICLE BEAMS Random access memory SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature measurement Temperature sensors Thermal conductivity TRANSISTORS |
| title | A 12-ns low-temperature DRAM |
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