A 12-ns low-temperature DRAM

A 12-ns low-temperature DRAM

A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported...

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Veröffentlicht in:IEEE transactions on electron devices 1989-08, Vol.36 (8), p.1414-1422
Hauptverfasser: Henkels, W.H., Lu, N.C.C., Hwang, W., Rajeevakumar, T.V., Franch, R.L., Jenkins, K.A., Bucelot, T.J., Heidel, D.F., Immediato, M.J.
Format: Artikel
Sprache:eng
Schlagworte:
360603 - Materials- Properties
426000 - Engineering- Components, Electron Devices & Circuits- (1990-)
Applied sciences
BEAMS
Circuit noise
Circuit testing
CMOS technology
Costs
Design. Technologies. Operation analysis. Testing
ELECTRON BEAMS
Electronics
ELEMENTS
ENGINEERING
Error analysis
Exact sciences and technology
Integrated circuits
LEPTON BEAMS
LOW TEMPERATURE
MATERIALS SCIENCE
MOS TRANSISTORS
NITROGEN
NOISE
NONMETALS
OPERATION
PARTICLE BEAMS
Random access memory
SEMICONDUCTOR DEVICES
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature measurement
Temperature sensors
Thermal conductivity
TRANSISTORS
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Beschreibung
Zusammenfassung:A 12-ns access-time 0.5-Mb CMOS DRAM (dynamic random-access memory) operated at liquid-nitrogen temperatures is discussed. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of soft error rate (SER) at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.30953