Bulk and surface 1/f noise

Bulk and surface 1/f noise

The 1/f noise of an n-type silicon MOSFET has been studied under conditions ranging from accumulation to depletion at 300 K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge's empirical 1/f noise parameter alpha with values between 10/sup -7/...

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Veröffentlicht in:IEEE transactions on electron devices 1989-05, Vol.36 (5), p.987-992
1. Verfasser: Vandamme, L.K.J.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Applied sciences
Charge carriers
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Fluctuations
History
Passivation
Resistors
Semiconductor device noise
Silicon
Surface treatment
Voltage
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Beschreibung
Zusammenfassung:The 1/f noise of an n-type silicon MOSFET has been studied under conditions ranging from accumulation to depletion at 300 K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge's empirical 1/f noise parameter alpha with values between 10/sup -7/ and 10/sup -5/. The alpha value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.299682