Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements

Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250/spl deg/C in both longitudinal and transverse configurations. The maximum GF observed was -29.3, corresponding to the piezoresistive coefficient /spl pi//sub 11/. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that, n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration.< >