A lateral magnetotransistor structure with a linear response to the magnetic field

A lateral magnetotransistor structure with a linear response to the magnetic field

An experimental study and analytical model of a novel magnetotransistor are presented. This device displays some very promising features. A linear response to the magnetic field is experimentally demonstrated and very high sensitivities are measured, on the order of 3000%/T. Previous comparable magn...

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Veröffentlicht in:IEEE transactions on electron devices 1989-06, Vol.36 (6), p.1076-1086
Hauptverfasser: Ristic, L., Smy, T., Baltes, H.P.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Applied sciences
CMOS technology
Displays
Electronics
Exact sciences and technology
Magnetic devices
Magnetic field measurement
Magnetic fields
Magnetic semiconductors
Magnetic sensors
Magnetic switching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Transistors
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Beschreibung
Zusammenfassung:An experimental study and analytical model of a novel magnetotransistor are presented. This device displays some very promising features. A linear response to the magnetic field is experimentally demonstrated and very high sensitivities are measured, on the order of 3000%/T. Previous comparable magnetotransistors have reported sensitivities on the order of 150%/T. A theoretical explanation of the very high sensitivity is proposed, involving carrier deflection as the dominant operating principle.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.24351