Electrochemical C-V profiling of heterojunction device structures
Electrochemical capacitance-voltage profiles of multiple (In,Al) GaAs heterostructures have been measured and compared with the results of a numerical calculation of the apparent charge density based on a one-dimensional Poisson solver. The calculation, using layer thicknesses, dopings, and heteroju...
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| Veröffentlicht in: | IEEE transactions on electron devices 1989-02, Vol.36 (2), p.309-313 |
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| container_end_page | 313 |
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| container_issue | 2 |
| container_start_page | 309 |
| container_title | IEEE transactions on electron devices |
| container_volume | 36 |
| creator | Seabaugh, A.C. Frensley, W.R. Matyi, R.J. Cabaniss, G.E. |
| description | Electrochemical capacitance-voltage profiles of multiple (In,Al) GaAs heterostructures have been measured and compared with the results of a numerical calculation of the apparent charge density based on a one-dimensional Poisson solver. The calculation, using layer thicknesses, dopings, and heterojunction band discontinuities obtained from MBE growth calibrations, is in overall agreement with the measured data. The largest discrepancy occurs between the expected and measured heterojunction band discontinuity. This difference is consistent with an electrolyte/semiconductor interface which is not planar on a scale comparable to the layer thickness.< > |
| doi_str_mv | 10.1109/16.19930 |
| format | Article |
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The calculation, using layer thicknesses, dopings, and heterojunction band discontinuities obtained from MBE growth calibrations, is in overall agreement with the measured data. The largest discrepancy occurs between the expected and measured heterojunction band discontinuity. This difference is consistent with an electrolyte/semiconductor interface which is not planar on a scale comparable to the layer thickness.< ></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.19930</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Calibration ; Capacitance measurement ; Capacitance-voltage characteristics ; Charge measurement ; Current measurement ; Density measurement ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Heterojunctions ; Interfaces ; Semiconductor device doping ; Semiconductor electronics. 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The calculation, using layer thicknesses, dopings, and heterojunction band discontinuities obtained from MBE growth calibrations, is in overall agreement with the measured data. The largest discrepancy occurs between the expected and measured heterojunction band discontinuity. This difference is consistent with an electrolyte/semiconductor interface which is not planar on a scale comparable to the layer thickness.< ></description><subject>Applied sciences</subject><subject>Calibration</subject><subject>Capacitance measurement</subject><subject>Capacitance-voltage characteristics</subject><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Density measurement</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Heterojunctions</subject><subject>Interfaces</subject><subject>Semiconductor device doping</subject><subject>Semiconductor electronics. Microelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thickness measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seabaugh, A.C.</creatorcontrib><creatorcontrib>Frensley, W.R.</creatorcontrib><creatorcontrib>Matyi, R.J.</creatorcontrib><creatorcontrib>Cabaniss, G.E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Seabaugh, A.C.</au><au>Frensley, W.R.</au><au>Matyi, R.J.</au><au>Cabaniss, G.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrochemical C-V profiling of heterojunction device structures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1989-02-01</date><risdate>1989</risdate><volume>36</volume><issue>2</issue><spage>309</spage><epage>313</epage><pages>309-313</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Electrochemical capacitance-voltage profiles of multiple (In,Al) GaAs heterostructures have been measured and compared with the results of a numerical calculation of the apparent charge density based on a one-dimensional Poisson solver. The calculation, using layer thicknesses, dopings, and heterojunction band discontinuities obtained from MBE growth calibrations, is in overall agreement with the measured data. The largest discrepancy occurs between the expected and measured heterojunction band discontinuity. This difference is consistent with an electrolyte/semiconductor interface which is not planar on a scale comparable to the layer thickness.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.19930</doi><tpages>5</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 1989-02, Vol.36 (2), p.309-313 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_16_19930 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Calibration Capacitance measurement Capacitance-voltage characteristics Charge measurement Current measurement Density measurement Electronics Exact sciences and technology Gallium arsenide Heterojunctions Interfaces Semiconductor device doping Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thickness measurement |
| title | Electrochemical C-V profiling of heterojunction device structures |
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