36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology

36-GHz static digital frequency dividers in AlInAs-GaInAs HBT technology

Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design whic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1991-12, Vol.38 (12), p.2719-2720
Hauptverfasser: Jensen, J.F., Stanchina, W.E., Metzger, R.A., Liu, T., Kargodorian, T.V., Pierce, M.W., McCray, L.G.
Format: Artikel
Sprache:eng
Schlagworte:
Contact resistance
Electrical resistance measurement
Frequency conversion
Gallium arsenide
Heterojunction bipolar transistors
Molecular beam epitaxial growth
Silicon
Space technology
Temperature measurement
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Static divide-by-four circuits have been fabricated that operate up to 36 GHz using AlInAs-GaInAs heterojunction bipolar transistor (HBT) IC technology processing an f/sub t/ and f/sub max/ of 110 and 73 GHz, respectively. The transistors used consisted of an abrupt emitter-base junction design which incorporated a low-temperature p-GaInAs spacer as part of the base to inhibit beryllium diffusion. The AlInAs-GaInAs HBT device layers were grown lattice-matched to semi-insulating InP substrates by solid-source molecular beam epitaxy (MBE).
ISSN:0018-9383
1557-9646
DOI:10.1109/16.158756