Dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells

The mobility due to misfit dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, i...

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Veröffentlicht in:	IEEE transactions on electron devices 1991-12, Vol.38 (12), p.2582-2589
Hauptverfasser:	Zhao, D., Kuhn, K.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Artificial intelligence Capacitive sensors Electron mobility Epitaxial layers Impurities Indium Maxwell-Boltzmann distribution Optical scattering Particle scattering
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