Dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells

Dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells

The mobility due to misfit dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, i...

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Veröffentlicht in:IEEE transactions on electron devices 1991-12, Vol.38 (12), p.2582-2589
Hauptverfasser: Zhao, D., Kuhn, K.J.
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropic magnetoresistance
Artificial intelligence
Capacitive sensors
Electron mobility
Epitaxial layers
Impurities
Indium
Maxwell-Boltzmann distribution
Optical scattering
Particle scattering
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Zusammenfassung:The mobility due to misfit dislocation scattering in n-type modulation doped Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum wells is discussed. Initially, the dislocations are modeled as an array of orthogonal charged lines. The scattering potential is introduced, including both the coulombic and piezoelectric components. The expression for the mobility limited by dislocation scattering is established, and the anisotropic characteristics of mobility and its variation with various material and device parameters are presented and discussed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.158679