A novel RF-insensitive EED utilizing an integrated metal-oxide-semiconductor structure

The description and characterization of an electroexplosive device (EED) are presented. The structure is designed, using microelectric fabrication techniques, to be inherently immune to radiofrequency (RF) radiation and also offers protection against stray signals associated with RF-induced arcing. A detailed discussion of the structure, which includes the fundamental mechanisms of operation, fabrication techniques, the device's frequency response and sensitivity to RF-induced arcing, and its compatibility with fire control systems, is provided. Preliminary test results of the prototype device are discussed and show a significant improvement in the system's overall EMI immunity. These results include bench and field measurements of the structure's RF response for frequencies of 10-225 MHz and field measurements of the device's sensitivity to RF-induced arcing. The measurements indicate a significant reduction in real power dissipated by an EED employing the structure over an EED employing a conventional bridgewire (20 dB at 90 MHz).< >