Stress analysis of pressure-assisted sintering for the double-side assembly of power module

PurposeCrack and stress distribution on dies are key issues for the pressure-assisted sintering bonding of power modules. The purpose of this research is to build a relationship among stress distributions, sintering sequences and sintering pressures during the sintering processes. Design/methodology...

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Veröffentlicht in:Soldering & surface mount technology 2019-02, Vol.31 (1), p.20-27
Hauptverfasser: Liu, Yang, Zhang, Hao, Wang, Lingen, Fan, Xuejun, Zhang, Guoqi, Sun, F
Format: Artikel
Sprache:eng
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Zusammenfassung:PurposeCrack and stress distribution on dies are key issues for the pressure-assisted sintering bonding of power modules. The purpose of this research is to build a relationship among stress distributions, sintering sequences and sintering pressures during the sintering processes. Design/methodology/approachThree sintering sequences, S(a), S(b) and S(c), have been designed for the double-side assembly of power module in this paper. Experiments and finite element method (FEM) analysis are conducted to investigate the crack and stress distribution. FindingsThe sintering sequence had significant effects on the crack generation in the chips during the sintering process under 30-MPa pressure. The simulation results revealed that the module sintered by S(a) showed lower chip stress than those by the other two sintering sequences under 30 MPa. In contrast, the chip stress is the highest when the sintering sequence follows S(b). The simulation results explained the crack generation and prolongation in the experiments. S(a) was recommended as the best sintering sequence because of the lowest chip stress and highest yield rate. Originality/valueThis study investigated the stress distributions of the double-side sintered power modules under different sintering pressures. Based on the results of experiments and FEM analysis, the best sintering sequence design is provided under various sintering pressures.
ISSN:0954-0911
1758-6836
DOI:10.1108/SSMT-01-2018-0005