Electrical Studies of Neutron-Irradiated n -Type Si: Defect Structure and Annealing

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Veröffentlicht in:	Phys. Rev., 163: 801-8(Nov 15, 1967) 163: 801-8(Nov 15, 1967), 1967-01, Vol.163 (3), p.801-808
1. Verfasser:	Stein, Herman J.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANNEALING DEFECTS IMPURITIES IRRADIATION LATTICES N33110 -Physics (Solid State)-Radiation Effects NEUTRONS NEUTRONS/effects on n-type silicon, impurity and irradiation-temperature dependence of formation and annealing of defects from, (E) PRODUCTION RADIATION EFFECTS SILICON SILICON/radioinduced defects in n-type, effects of impurities and irradiation temperature on formation and annealing of neutron, (E) TEMPERATURE
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