Auger Electron Ejection from Germanium and Silicon by Noble Gas Ions

Experimental results concerning electron ejection from annealed, atomically clean surfaces of Ge and Si by the singly chnrged ions of the noble gases are reponted. The (111) and (100) faces of Si and the (111) face of Ge were studied. Total yield snd kinetic energy distribution of ejected electrons were measured and ion energies varied in the range 10 to 1000 ev. A new method of operation of the apparatus and of obtaining the kinetic energy distributions from the recorded retarding potential data was employed. Documentation of the state of the target surfaces is given including photomicrographs and electron micrographs of the Si surfaces. Since these experimental results are subsequently to be interpreted theoretically, identification of the results with the theoretical ideas only is given here. (auth)