Magneto-induced topological phase transition in inverted InAs/GaSb bilayers

We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently the electron and hole densities, can be continuously tuned. We observe a topological phase transition around the magnetic field where a band crossing occurs, accompanied by a bulk-gap closure characterized by a bulk conductance peak (BCP). In another set of experiments, we study the transition under a tilted magnetic field (tilt angle ). We observe the characteristic magnetoconductance around BCP as a function of , which dramatically depends on the density of the bilayers. In a relatively deep inversion (hence a higher density) regime, where the electron-hole hybridization dominates the excitonic interaction, the BCP grows with . On the contrary, in a shallowly inverted (a lower density) regime, where the excitonic interaction dominates the hybridization, the BCP is suppressed indicating a smooth crossover without a gap closure. This suggests the existence of a low-density, correlated insulator with spontaneous symmetry breaking near the critical point. Our highly controllable electron-hole system offers an ideal platform to study interacting topological states as proposed by recent theories.