Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S{sub c} , we find the dc conductivity at low temperatures shows an excellent fit to the scaling form {sigma}(S,thinspT)=AT{sup x}f[(S{minus}S{sub c})/T{sup y}] on both sides of the transition. The scalin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical Review Letters 1999, Vol.82 (1), p.137-140
Hauptverfasser:	Bogdanovich, S., Sarachik, M. P., Bhatt, R. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	BORON ADDITIONS DOPED MATERIALS ELECTRIC CONDUCTIVITY MATERIALS SCIENCE SCALING SILICON STRESSES TEMPERATURE DEPENDENCE
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!