Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S{sub c} , we find the dc conductivity at low temperatures shows an excellent fit to the scaling form {sigma}(S,thinspT)=AT{sup x}f[(S{minus}S{sub c})/T{sup y}] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region. {copyright} {ital 1998} {ital The American Physical Society }