Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075212 |
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| container_issue | 7 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 84 |
| creator | Reshchikov, Michael A. Kvasov, Alexander A. Bishop, Marilyn F. McMullen, Tom Usikov, Alexander Soukhoveev, Vitali Dmitriev, Vladimir A. |
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| doi_str_mv | 10.1103/PhysRevB.84.075212 |
| format | Article |
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| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075212 |
| issn | 1098-0121 1550-235X |
| language | eng |
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| source | American Physical Society Journals |
| title | Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN |
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