Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-05, Vol.71 (19), p.195309.1-195309.10, Article 195308 |
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| container_end_page | 195309.10 |
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| container_issue | 19 |
| container_start_page | 195309.1 |
| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 71 |
| creator | ADAMS, J. A BOSTWICK, A OHTA, T OHUCHI, Fumio S OLMSTEAD, Mariorie A |
| description | |
| doi_str_mv | 10.1103/PhysRevB.71.195308 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1103_PhysRevB_71_195308</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>16929711</sourcerecordid><originalsourceid>FETCH-LOGICAL-c277t-fe005239704097e295c598e95fcf28659b1b55300efcb181e8f46602fda9b3c33</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMoWKt_wFMugh62ZpLN7qY3LdUKBcUqeFuy6YRG9qMkWaX_3i1VvMy8h3lemIeQS2ATACZuXza78Ipf95McJqCkYMURGYGULOFCfhwPmakiYcDhlJyF8MkYpCrlI9IsMKLvXDtMqw1S2_lGR9e1tLNU133j2r6hAWts3Rrpt4sbGlztzHAxpfMaTfRd6wzV7Zrq2DVDDNH3JvYe9x0rdw0AN9O7eoXn5MTqOuDF7x6T94f522yRLJ8fn2Z3y8TwPI-JRcYkFypnKVM5ciWNVAUqaY3lRSZVBZUcnmRoTQUFYGHTLGPcrrWqhBFiTPih1_guBI-23HrXaL8rgZV7YeWfsDKH8iBsgK4O0FYHo2vrdWtc-CczxVUOIH4AZ4ht2A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe</title><source>American Physical Society Journals</source><creator>ADAMS, J. A ; BOSTWICK, A ; OHTA, T ; OHUCHI, Fumio S ; OLMSTEAD, Mariorie A</creator><creatorcontrib>ADAMS, J. A ; BOSTWICK, A ; OHTA, T ; OHUCHI, Fumio S ; OLMSTEAD, Mariorie A</creatorcontrib><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.71.195308</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Solid surfaces and solid-solid interfaces ; Surface and interface electron states ; Surface states, band structure, electron density of states ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (19), p.195309.1-195309.10, Article 195308</ispartof><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c277t-fe005239704097e295c598e95fcf28659b1b55300efcb181e8f46602fda9b3c33</citedby><cites>FETCH-LOGICAL-c277t-fe005239704097e295c598e95fcf28659b1b55300efcb181e8f46602fda9b3c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16929711$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ADAMS, J. A</creatorcontrib><creatorcontrib>BOSTWICK, A</creatorcontrib><creatorcontrib>OHTA, T</creatorcontrib><creatorcontrib>OHUCHI, Fumio S</creatorcontrib><creatorcontrib>OLMSTEAD, Mariorie A</creatorcontrib><title>Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe</title><title>Physical review. B, Condensed matter and materials physics</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Surface and interface electron states</subject><subject>Surface states, band structure, electron density of states</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LAzEQhoMoWKt_wFMugh62ZpLN7qY3LdUKBcUqeFuy6YRG9qMkWaX_3i1VvMy8h3lemIeQS2ATACZuXza78Ipf95McJqCkYMURGYGULOFCfhwPmakiYcDhlJyF8MkYpCrlI9IsMKLvXDtMqw1S2_lGR9e1tLNU133j2r6hAWts3Rrpt4sbGlztzHAxpfMaTfRd6wzV7Zrq2DVDDNH3JvYe9x0rdw0AN9O7eoXn5MTqOuDF7x6T94f522yRLJ8fn2Z3y8TwPI-JRcYkFypnKVM5ciWNVAUqaY3lRSZVBZUcnmRoTQUFYGHTLGPcrrWqhBFiTPih1_guBI-23HrXaL8rgZV7YeWfsDKH8iBsgK4O0FYHo2vrdWtc-CczxVUOIH4AZ4ht2A</recordid><startdate>20050501</startdate><enddate>20050501</enddate><creator>ADAMS, J. A</creator><creator>BOSTWICK, A</creator><creator>OHTA, T</creator><creator>OHUCHI, Fumio S</creator><creator>OLMSTEAD, Mariorie A</creator><general>American Physical Society</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050501</creationdate><title>Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe</title><author>ADAMS, J. A ; BOSTWICK, A ; OHTA, T ; OHUCHI, Fumio S ; OLMSTEAD, Mariorie A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c277t-fe005239704097e295c598e95fcf28659b1b55300efcb181e8f46602fda9b3c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface electron states</topic><topic>Surface states, band structure, electron density of states</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ADAMS, J. A</creatorcontrib><creatorcontrib>BOSTWICK, A</creatorcontrib><creatorcontrib>OHTA, T</creatorcontrib><creatorcontrib>OHUCHI, Fumio S</creatorcontrib><creatorcontrib>OLMSTEAD, Mariorie A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ADAMS, J. A</au><au>BOSTWICK, A</au><au>OHTA, T</au><au>OHUCHI, Fumio S</au><au>OLMSTEAD, Mariorie A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2005-05-01</date><risdate>2005</risdate><volume>71</volume><issue>19</issue><spage>195309.1</spage><epage>195309.10</epage><pages>195309.1-195309.10</pages><artnum>195308</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><cop>Ridge, NY</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.71.195308</doi></addata></record> |
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| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2005-05, Vol.71 (19), p.195309.1-195309.10, Article 195308 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_crossref_primary_10_1103_PhysRevB_71_195308 |
| source | American Physical Society Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface electron states Surface states, band structure, electron density of states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T16%3A55%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Heterointerface%20formation%20of%20aluminum%20selenide%20with%20silicon%20:%20Electronic%20and%20atomic%20structure%20of%20Si(111):AlSe&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=ADAMS,%20J.%20A&rft.date=2005-05-01&rft.volume=71&rft.issue=19&rft.spage=195309.1&rft.epage=195309.10&rft.pages=195309.1-195309.10&rft.artnum=195308&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.71.195308&rft_dat=%3Cpascalfrancis_cross%3E16929711%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |