Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe

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Bibliographische Detailangaben
Veröffentlicht in:	Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-05, Vol.71 (19), p.195309.1-195309.10, Article 195308
Hauptverfasser:	ADAMS, J. A, BOSTWICK, A, OHTA, T, OHUCHI, Fumio S, OLMSTEAD, Mariorie A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface electron states Surface states, band structure, electron density of states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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