Analysis of the effect of isotope scattering on the thermal conductivity of crystalline silicon

We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the {sup 28}Si isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope con...

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Veröffentlicht in:Physical Review, B: Condensed Matter B: Condensed Matter, 1999-04, Vol.59 (15), p.10105-10110
Hauptverfasser: Capinski, W. S., Maris, H. J., Tamura, S.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the {sup 28}Si isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon. {copyright} {ital 1999} {ital The American Physical Society}
ISSN:0163-1829
1095-3795
DOI:10.1103/PhysRevB.59.10105