Analysis of the effect of isotope scattering on the thermal conductivity of crystalline silicon
We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the {sup 28}Si isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope con...
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Veröffentlicht in: | Physical Review, B: Condensed Matter B: Condensed Matter, 1999-04, Vol.59 (15), p.10105-10110 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the {sup 28}Si isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon. {copyright} {ital 1999} {ital The American Physical Society} |
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ISSN: | 0163-1829 1095-3795 |
DOI: | 10.1103/PhysRevB.59.10105 |