Evidence for a new type of metal-semiconductor interaction on GaSb

Evidence for a new type of metal-semiconductor interaction on GaSb

The formation of Au-semiconductor Schottky barriers is studied using soft-x-ray photoemission spectroscopy. The Au-GaSb interface is highly nonstoichiometric due to selective removal of Sb. This nonstoichiometry results in acceptorlike states which pin the Fermi level at the interface and determine...

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Veröffentlicht in:Phys. Rev., B; (United States) B; (United States), 1978-03, Vol.17 (6), p.2682-2684
Hauptverfasser: Chye, P. W., Lindau, I., Pianetta, P., Garner, C. M., Spicer, W. E.
Format: Artikel
Sprache:eng
Schlagworte:
360104 - Metals & Alloys- Physical Properties
ALLOYS
ANTIMONY ALLOYS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY LEVELS
FERMI LEVEL
GALLIUM ALLOYS
GOLD
INTERFACES
IONIZING RADIATIONS
MATERIALS SCIENCE
METALS
PHOTOEMISSION
PNICTIDES
RADIATIONS
SCHOTTKY EFFECT
SECONDARY EMISSION
SOFT X RADIATION
TRANSITION ELEMENTS
X RADIATION
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Zusammenfassung:The formation of Au-semiconductor Schottky barriers is studied using soft-x-ray photoemission spectroscopy. The Au-GaSb interface is highly nonstoichiometric due to selective removal of Sb. This nonstoichiometry results in acceptorlike states which pin the Fermi level at the interface and determine the Schottky barrier height.
ISSN:0163-1829
DOI:10.1103/PhysRevB.17.2682