Influence of nitrogen stoichiometry and the role of Sm 5 d states in SmN thin films

We report a comprehensive study of the synthesis of epitaxial SmN thin films on LaAlO 3 (100) by molecular beam epitaxy under slow-growth conditions. By carefully tuning the substrate temperature and the molecular nitrogen partial pressure, we are able to control the nitrogen content of our samples and produce near-stoichiometric, well-ordered SmN thin films. The influence of nitrogen defects on the samarium ion valence and the electronic structure is investigated by x-ray absorption and photoelectron spectroscopy, suggesting that the empty Sm 5 d states may act as a charge reservoir stabilizing the 4 f 5 configuration in the nitrogen-deficient compound. The spectra also reveal a significant hybridization of the Sm 4 f and N 2 p states.