Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta − B Spin Hall Electrode
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| Veröffentlicht in: | Physical review applied 2018-10, Vol.10 (4), Article 044011 |
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| container_title | Physical review applied |
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| creator | Kato, Y. Saito, Y. Yoda, H. Inokuchi, T. Shirotori, S. Shimomura, N. Oikawa, S. Tiwari, A. Ishikawa, M. Shimizu, M. Altansargai, B. Sugiyama, H. Koi, K. Ohsawa, Y. Kurobe, A. |
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| doi_str_mv | 10.1103/PhysRevApplied.10.044011 |
| format | Article |
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| fulltext | fulltext |
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| ispartof | Physical review applied, 2018-10, Vol.10 (4), Article 044011 |
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| language | eng |
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| source | American Physical Society Journals |
| title | Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta − B Spin Hall Electrode |
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