X-ray topography studies of microdefects in silicon

X-ray topography has been successfully applied to study microdefects with the sizes in the range from well below standard topographic resolution to tenths of micrometers, thus effectively widening applicability of the Lang section topography. The lower value is set by the application of high order asymmetric reflection. Disappearance of the Kato fringes on the section topography is a clear indication of the existence of defects, which are otherwise not detectable as the standard contrast features. The presence of the defects with such sizes was also confirmed by transmission electron microscopy. Microdefects in the higher end of the size spectrum are well covered by Lang traverse and section topography where detailed contrast study is possible for individual defects. Lang traverse and section topography was applied to study specific case of oxygen related defects in silicon crystals.