The Electron Distribution in Silicon. I. Experiment

The Electron Distribution in Silicon. I. Experiment

We have completed absolute measurements of the X-ray structure factors of silicon by the Pendellösung method using the techniques developed by Hart & Milne (1969). The 111, 220, 311, 400, 331, 422, 333, 511, 440, 444, 642, 660, 555, 844 and 880 reflexions were all measured in the symmetric Laue...

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Veröffentlicht in:Proceedings of the Royal Society of London. Series A, Mathematical and physical sciences Mathematical and physical sciences, 1973-03, Vol.332 (1589), p.223-238
Hauptverfasser: Aldred, P. J. E., Hart, Michael
Format: Artikel
Sprache:eng
Schlagworte:
Approximation
Atoms
Charge density
Crystals
Electronic structure
Electrons
Fringe
Mathematical minima
Room temperature
Silicon
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Beschreibung
Zusammenfassung:We have completed absolute measurements of the X-ray structure factors of silicon by the Pendellösung method using the techniques developed by Hart & Milne (1969). The 111, 220, 311, 400, 331, 422, 333, 511, 440, 444, 642, 660, 555, 844 and 880 reflexions were all measured in the symmetric Laue case with both MoKα1, and AgKα1 radiations and at 92.2 and 293.2 K. The internal consistency of the results indicates that probable errors of order 0.1% are realistic.
ISSN:1364-5021
0080-4630
1471-2946
2053-9169
DOI:10.1098/rspa.1973.0022