Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2
The Power figure of Merit (PFOM = V br 2 /R on,sp ) is used to evaluate the performance of Gallium Oxide ( β -Ga 2 O 3 ) power devices. In this study, a lateral β -Ga 2 O 3 MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentratio...
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| Veröffentlicht in: | Engineering Research Express 2024-03, Vol.6 (1), p.15060 |
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| creator | Zhang, Yunfei Luan, Suzhen |
| description | The Power figure of Merit (PFOM = V
br
2
/R
on,sp
) is used to evaluate the performance of Gallium Oxide (
β
-Ga
2
O
3
) power devices. In this study, a lateral
β
-Ga
2
O
3
MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3
μ
m, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm
–2
. Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37
μ
m, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 10
17
cm
−3
. This study provides a new approach for the design of Gallium Oxide power devices. |
| doi_str_mv | 10.1088/2631-8695/ad1fb5 |
| format | Article |
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br
2
/R
on,sp
) is used to evaluate the performance of Gallium Oxide (
β
-Ga
2
O
3
) power devices. In this study, a lateral
β
-Ga
2
O
3
MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3
μ
m, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm
–2
. Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37
μ
m, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 10
17
cm
−3
. This study provides a new approach for the design of Gallium Oxide power devices.</description><identifier>ISSN: 2631-8695</identifier><identifier>EISSN: 2631-8695</identifier><identifier>DOI: 10.1088/2631-8695/ad1fb5</identifier><language>eng</language><ispartof>Engineering Research Express, 2024-03, Vol.6 (1), p.15060</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1088_2631_8695_ad1fb53</cites><orcidid>0009-0000-0860-3373 ; 0009-0006-0048-3470</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhang, Yunfei</creatorcontrib><creatorcontrib>Luan, Suzhen</creatorcontrib><title>Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2</title><title>Engineering Research Express</title><description>The Power figure of Merit (PFOM = V
br
2
/R
on,sp
) is used to evaluate the performance of Gallium Oxide (
β
-Ga
2
O
3
) power devices. In this study, a lateral
β
-Ga
2
O
3
MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3
μ
m, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm
–2
. Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37
μ
m, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 10
17
cm
−3
. This study provides a new approach for the design of Gallium Oxide power devices.</description><issn>2631-8695</issn><issn>2631-8695</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpjYJAwNNAzNLCw0DcyMzbUtTCzNNVPTDFMSzJlYuCEC7EgsTkYeIuLM5MMjM0NLM1MLC04GZxdUosz0_MU8tMUchJLUosScxTObdJ1T1QwUvBXMFbw9Q92cw1RKM8syVAIcPP3BakzN7PUMzFS8A1XSM5VeNQw2YiHgTUtMac4lRdKczMYADU5e-gmF-UXFxelpsUXFGXmJhZVxhsaxIPcGw9yUDzIQfEQ9xqToQUANAlFuw</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Zhang, Yunfei</creator><creator>Luan, Suzhen</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0009-0000-0860-3373</orcidid><orcidid>https://orcid.org/0009-0006-0048-3470</orcidid></search><sort><creationdate>20240301</creationdate><title>Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2</title><author>Zhang, Yunfei ; Luan, Suzhen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1088_2631_8695_ad1fb53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yunfei</creatorcontrib><creatorcontrib>Luan, Suzhen</creatorcontrib><collection>CrossRef</collection><jtitle>Engineering Research Express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Yunfei</au><au>Luan, Suzhen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2</atitle><jtitle>Engineering Research Express</jtitle><date>2024-03-01</date><risdate>2024</risdate><volume>6</volume><issue>1</issue><spage>15060</spage><pages>15060-</pages><issn>2631-8695</issn><eissn>2631-8695</eissn><abstract>The Power figure of Merit (PFOM = V
br
2
/R
on,sp
) is used to evaluate the performance of Gallium Oxide (
β
-Ga
2
O
3
) power devices. In this study, a lateral
β
-Ga
2
O
3
MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3
μ
m, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm
–2
. Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37
μ
m, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 10
17
cm
−3
. This study provides a new approach for the design of Gallium Oxide power devices.</abstract><doi>10.1088/2631-8695/ad1fb5</doi><orcidid>https://orcid.org/0009-0000-0860-3373</orcidid><orcidid>https://orcid.org/0009-0006-0048-3470</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2631-8695 |
| ispartof | Engineering Research Express, 2024-03, Vol.6 (1), p.15060 |
| issn | 2631-8695 2631-8695 |
| language | eng |
| recordid | cdi_crossref_primary_10_1088_2631_8695_ad1fb5 |
| source | IOP Publishing Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| title | Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2 |
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