Design of lateral β-Ga 2 O 3 MOSFET with PFOM of 769.42 MW cm –2

The Power figure of Merit (PFOM = V br 2 /R on,sp ) is used to evaluate the performance of Gallium Oxide ( β -Ga 2 O 3 ) power devices. In this study, a lateral β -Ga 2 O 3 MOSFET device is designed. The effects of different gate lengths, gate-drain distances, and epitaxial layer doping concentrations on the device performance are investigated. It is found that when the gate length is 3 μ m, the breakdown voltage of the device is 3099 V, which is approximately twice that of devices with other gate lengths. The PFOM of the device reaches 769.14MW cm –2 . Furthermore, the breakdownvoltage exhibits a trend of initially decreasing and then increasing with the increase of the gate-drain distance. When the gate-drain distance is 37 μ m, the breakdown voltage of the device reaches 4367 V. Additionally, it is observed that the device performance is optimal when the epitaxial layer doping concentration is 2 × 10 17 cm −3 . This study provides a new approach for the design of Gallium Oxide power devices.