Design of a highly efficient n-CdS/p-AgGaTe 2 /p+-SnS double-heterojunction thin film solar cell

In this article, AgGaTe 2 -based n -CdS/ p -AgGaTe 2 / p + -SnS double-heterojunction solar cells have been designed and explored utilizing a solar cell capacitance simulator (SCAPS-1D). This design manifested n -type CdS and p + -type SnS as window and back surface field (BSF) layer, respectively with the AgGaTe 2 absorber. The major contributing parameters of these layers such as thickness, doping concentration level, and bulk flaws have been adjusted to reach the optimum computation. This introduced n -CdS/ p -AgGaTe 2 / p + -SnS double-heterostructure solar cell demonstrates the significant power conversion efficiency (PCE) of 32.48% with the open circuit voltage, V OC of 0.96 V, short circuit current, J SC of 38.64 mA cm −2 , and the Fill factor, FF of 87.31%. This remarkable efficiency is originated by the formation of a higher built-in potential at the p -AgGaTe 2 / p + -SnS heterostructure and a decrease in the surface recombination velocity brought on by the SnS BSF layer. This computational study demonstrates the potential of AgGaTe 2 as an absorber and SnS as a BSF layer, and pave the way for the AgGaTe 2 -based experimental research in the era of solar cells.