Ultrafast photo-induced phonon hardening due to Pauli blocking in MAPbI 3 single-crystal and polycrystalline perovskites

Metal-halide perovskite semiconductors have attracted intense interest over the past decade, particularly for applications in photovoltaics. Low-energy optical phonons combined with significant crystal anharmonicity play an important role in charge-carrier cooling and scattering in these materials,...

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Veröffentlicht in:JPhys materials 2021-10, Vol.4 (4), p.44017
Hauptverfasser: Xia, Chelsea Q, Poncé, Samuel, Peng, Jiali, Ulatowski, Aleksander M, Patel, Jay B, Wright, Adam D, Milot, Rebecca L, Kraus, Hans, Lin, Qianqian, Herz, Laura M, Giustino, Feliciano, Johnston, Michael B
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Sprache:eng
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Zusammenfassung:Metal-halide perovskite semiconductors have attracted intense interest over the past decade, particularly for applications in photovoltaics. Low-energy optical phonons combined with significant crystal anharmonicity play an important role in charge-carrier cooling and scattering in these materials, strongly affecting their optoelectronic properties. We have observed optical phonons associated with Pb–I stretching in both MAPbI 3 single crystals and polycrystalline thin films as a function of temperature by measuring their terahertz conductivity spectra with and without photoexcitation. An anomalous bond hardening was observed under above-bandgap illumination for both single-crystal and polycrystalline MAPbI 3 . First-principles calculations reproduced this photo-induced bond hardening and identified a related lattice contraction (photostriction), with the mechanism revealed as Pauli blocking. For single-crystal MAPbI 3 , phonon lifetimes were significantly longer and phonon frequencies shifted less with temperature, compared with polycrystalline MAPbI 3 . We attribute these differences to increased crystalline disorder, associated with grain boundaries and strain in the polycrystalline MAPbI 3 . Thus we provide fundamental insight into the photoexcitation and electron–phonon coupling in MAPbI 3 .
ISSN:2515-7639
2515-7639
DOI:10.1088/2515-7639/ac22b9