Research on non-volatile resistive switching characteristics of CsPbBr 3 films fabricated by hot-air-flowing assisted strategy

Halide perovskites as emerging functional material have widespread applications in solar cells, lasers, photodetectors and resistive switching memory due to their preeminent properties. All-inorganic halide perovskites CsPbBr 3 have shown great potential to deliver high performance devices due to their excellent stability compared with organic–inorganic hybrid counterpart. Although many advances have been made in film quality and device performance, CsPbBr 3 films still face the problems of forming other phase structures or using toxic antisolvents in the preparation process. Here, we introduced a hot-air-flowing assisted strategy to regulate nucleation and crystal during the CsPbBr 3 films development process. The experimental results demonstrate that the CsPbBr 3 films with pure phase and densely packed crystalline grains can be obtained at a hot-air-flowing temperature of 180 °C. Subsequently, the resulting ITO/CsPbBr 3 /Al device exhibit non-volatile and reproducible bipolar resistance switching behavior with decent endurance (100 cycles), retention time (10 4 s) and storage window (>10 3 ). The formation of conductive filaments and trap-controlled space-charge-limited-current (SCLC) conduction mechanism were employed to interpret the resistance switching behavior. Such a hot-air-flowing assisted strategy offers the antisolvent-free and low-cost preparation method of CsPbBr 3 films for resistive switching memory.