All-optical memory based on slow light and Kerr effect in photonic crystal platform with independent write/read/hold control

A general scheme has been proposed for the design of photonic-crystal-based all-optical memory by implementing the Kerr effect and slow light phenomenon and a memory cell with independent control on the read, write and hold processes is presented. A photonic crystal slab platform comprised of air holes in a square array with a hole radius of R = 192.5 nm and slab thickness of 275 nm is considered to realize the optical memory operating at the signal and pump wavelengths of λ = 1550 nm and λ = 1604 nm, respectively. The radii of the holes and the thickness of the proposed slab are engineered to provide proper functionality in the write/read waveguides and memory cell. For the slab thickness of 275 nm, the radii of the defect holes at the center of the read and write channels, and memory cell are determined to be 66 nm, 60.5 nm, and 55 nm, respectively. The pump pulse with a peak power of 2.65 W and a minimum time duration of ∼2.64 ps is required for the reading process. Also, the peak power and minimum time duration of 4.7 W and 1.35 ps, respectively are required to accomplish the writing process. The study has been carried out by 3D PWE and 3D FDTD methods.