Uniform analysis of electronic sputtering in amorphizable and non-amorphizable insulators and semiconductors

Published experimental data on the variation of the Y sputtering yield with the Se electronic stopping power are analyzed. Systematic results for amorphizable (SiO2, SrCeO3, SrTiO3, CeO2) and non- amorphizable (LiF, KBr) insulators and semiconducting TiO2, ZnO, SiC, UO2 are used. Thermal activation mechanism of electronic sputtering is assumed. The ion-induced temperature is estimated applying the Analytical Thermal Spike Model. A highly accurate description of the experimental Y-Se data is given in the whole range of Se without the application of individual materials parameters apart the U activation energy. The values of U for SiO2 and UO2, are considerably lower than the Us sublimation energies. Sputtering proceeds without threshold of Se.