NiFe 2 O 4 nanoparticles for non-volatile bipolar resistive switching memory device

The present work reports the chemical synthesis of NiFe 2 O 4 (NFO) nanoparticles (NPs) and its use as a switching layer material in resistive switching (RS) devices. Various analytical techniques were used to confirm the phase, composition, and optical properties of the NFO NPs. With the support of the x-ray diffraction technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy confirmed the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy were applied to identify the NFO NPs functional groups. The Ag/NFO/fluorine-doped tin oxide device was fabricated, which shows bipolar RS with good endurance (10 4 cycles) and retention (6 × 10 3 s) properties. Moreover, the device’s conduction and RS mechanisms were also carried out.