High voltage trench insulated gate bipolar transistor with MOS structure for self-adjustable hole extraction

In this letter, a novel high voltage trench insulated gate bipolar transistor (IGBT) with MOS structure for self-adjustable hole extraction (MOS-SH-IGBT) is proposed. It features the adjustable hole path (AHP) region controlled by the MOS structure. The AHP region stores holes during on-state, extracts holes swiftly to reduce switching loss during turn-off and provides an extra hole path to avoid latch-up during short-circuit. Because of shielding effects of the AHP region, MOS-SH-IGBT could also increase breakdown voltage (BV) and decrease Miller capacitance. Based on simulated results, the BV of the proposed device is increased by 10% compared with the conventional separate floating P-base IGBT. Furthermore, the Miller capacitance and switching loss of MOS-SH-IGBT are decreased by 64% and 29%, respectively. As for the same Eon of 117.3mJ cm−2, the dIce/dt of the MOS-SH-IGBT is decreased by 38.7%, and for the same Eoff of 64.1mJ cm−2, the |dIce/dt| is decreased by 23.4%, which realizes lower EMI noise.