Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS 2 /GaN and β -In 2 Se 3 /GaN

Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS 2 /GaN and β -In 2 Se 3 /GaN

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Veröffentlicht in:Semiconductor science and technology 2019-07, Vol.34 (7), p.75020
Hauptverfasser: Solanke, Swanand V, Rathkanthiwar, Shashwat, Kalra, Anisha, Mech, Roop Kumar, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N
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Raghavan, Srinivasan
Nath, Digbijoy N
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title Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: case for MoS 2 /GaN and β -In 2 Se 3 /GaN
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