Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform

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Veröffentlicht in:Semiconductor science and technology 2018-08, Vol.33 (8), p.85014
Hauptverfasser: Linseis, V, Völklein, F, Reith, H, Hühne, R, Schnatmann, L, Nielsch, K, Woias, P
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container_end_page
container_issue 8
container_start_page 85014
container_title Semiconductor science and technology
container_volume 33
creator Linseis, V
Völklein, F
Reith, H
Hühne, R
Schnatmann, L
Nielsch, K
Woias, P
description
doi_str_mv 10.1088/1361-6641/aacf39
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6641_aacf39</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1088_1361_6641_aacf39</sourcerecordid><originalsourceid>FETCH-LOGICAL-c889-d66426a6942b09f774cef80a6d3abe7f021522c9e898e1476e1b02c5935be72d3</originalsourceid><addsrcrecordid>eNo9kE1LxDAURYMoOI7uXb4_UCcfnTRZ6qCOMODC2Zc0fWGiTVuSqLj0n9sy6urBfZcD9xByzegNo0qtmJCskLJkK2OsE_qELP6jU7KgXKqC8ZKfk4uUXillTAm6IN_7g7dvPaYEpm8hYxgxmvweEVocsW-xz5APGMOAHdocvYUxDlMpe0wwOLjzoCp4aYAJ6E0_ON-FBAFNmiAtfPp8AAP98IHdXxpm6NiZ7IYYLsmZM13Cq9-7JPuH-_1mW-yeH582t7vCKqWLdtrBpZG65A3VrqpKi05RI1thGqwc5WzNudWotEJWVhJZQ7lda7Ge3rwVS0KPWBuHlCK6eow-mPhVM1rPButZVz3rqo8GxQ_r8mbn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform</title><source>Institute of Physics Journals</source><creator>Linseis, V ; Völklein, F ; Reith, H ; Hühne, R ; Schnatmann, L ; Nielsch, K ; Woias, P</creator><creatorcontrib>Linseis, V ; Völklein, F ; Reith, H ; Hühne, R ; Schnatmann, L ; Nielsch, K ; Woias, P</creatorcontrib><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>DOI: 10.1088/1361-6641/aacf39</identifier><language>eng</language><ispartof>Semiconductor science and technology, 2018-08, Vol.33 (8), p.85014</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c889-d66426a6942b09f774cef80a6d3abe7f021522c9e898e1476e1b02c5935be72d3</citedby><cites>FETCH-LOGICAL-c889-d66426a6942b09f774cef80a6d3abe7f021522c9e898e1476e1b02c5935be72d3</cites><orcidid>0000-0002-0030-6048 ; 0000-0002-8517-0951</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Linseis, V</creatorcontrib><creatorcontrib>Völklein, F</creatorcontrib><creatorcontrib>Reith, H</creatorcontrib><creatorcontrib>Hühne, R</creatorcontrib><creatorcontrib>Schnatmann, L</creatorcontrib><creatorcontrib>Nielsch, K</creatorcontrib><creatorcontrib>Woias, P</creatorcontrib><title>Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform</title><title>Semiconductor science and technology</title><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAURYMoOI7uXb4_UCcfnTRZ6qCOMODC2Zc0fWGiTVuSqLj0n9sy6urBfZcD9xByzegNo0qtmJCskLJkK2OsE_qELP6jU7KgXKqC8ZKfk4uUXillTAm6IN_7g7dvPaYEpm8hYxgxmvweEVocsW-xz5APGMOAHdocvYUxDlMpe0wwOLjzoCp4aYAJ6E0_ON-FBAFNmiAtfPp8AAP98IHdXxpm6NiZ7IYYLsmZM13Cq9-7JPuH-_1mW-yeH582t7vCKqWLdtrBpZG65A3VrqpKi05RI1thGqwc5WzNudWotEJWVhJZQ7lda7Ge3rwVS0KPWBuHlCK6eow-mPhVM1rPButZVz3rqo8GxQ_r8mbn</recordid><startdate>20180801</startdate><enddate>20180801</enddate><creator>Linseis, V</creator><creator>Völklein, F</creator><creator>Reith, H</creator><creator>Hühne, R</creator><creator>Schnatmann, L</creator><creator>Nielsch, K</creator><creator>Woias, P</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0030-6048</orcidid><orcidid>https://orcid.org/0000-0002-8517-0951</orcidid></search><sort><creationdate>20180801</creationdate><title>Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform</title><author>Linseis, V ; Völklein, F ; Reith, H ; Hühne, R ; Schnatmann, L ; Nielsch, K ; Woias, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c889-d66426a6942b09f774cef80a6d3abe7f021522c9e898e1476e1b02c5935be72d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Linseis, V</creatorcontrib><creatorcontrib>Völklein, F</creatorcontrib><creatorcontrib>Reith, H</creatorcontrib><creatorcontrib>Hühne, R</creatorcontrib><creatorcontrib>Schnatmann, L</creatorcontrib><creatorcontrib>Nielsch, K</creatorcontrib><creatorcontrib>Woias, P</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Linseis, V</au><au>Völklein, F</au><au>Reith, H</au><au>Hühne, R</au><au>Schnatmann, L</au><au>Nielsch, K</au><au>Woias, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform</atitle><jtitle>Semiconductor science and technology</jtitle><date>2018-08-01</date><risdate>2018</risdate><volume>33</volume><issue>8</issue><spage>85014</spage><pages>85014-</pages><issn>0268-1242</issn><eissn>1361-6641</eissn><doi>10.1088/1361-6641/aacf39</doi><orcidid>https://orcid.org/0000-0002-0030-6048</orcidid><orcidid>https://orcid.org/0000-0002-8517-0951</orcidid></addata></record>
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title Thickness and temperature dependent thermoelectric properties of Bi 87 Sb 13 nanofilms measured with a novel measurement platform
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T21%3A40%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thickness%20and%20temperature%20dependent%20thermoelectric%20properties%20of%20Bi%2087%20Sb%2013%20nanofilms%20measured%20with%20a%20novel%20measurement%20platform&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=Linseis,%20V&rft.date=2018-08-01&rft.volume=33&rft.issue=8&rft.spage=85014&rft.pages=85014-&rft.issn=0268-1242&rft.eissn=1361-6641&rft_id=info:doi/10.1088/1361-6641/aacf39&rft_dat=%3Ccrossref%3E10_1088_1361_6641_aacf39%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true