Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10 m ) or ultralow (

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Veröffentlicht in:Nanotechnology 2023-09, Vol.34 (37), p.375602
Hauptverfasser: Auzelle, T, Oliva, M, John, P, Ramsteiner, M, Trampert, A, Geelhaar, L, Brandt, O
Format: Artikel
Sprache:eng
Schlagworte:
III-nitrides
incubation time
molecular beam epitaxy
nanowire
nucleation site
self-assembly
transition metal nitrides
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Zusammenfassung:The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10 m ) or ultralow (
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/acdde8