Exploring charge transfer and schottky barrier modulation at monolayer Ge 2 Sb 2 Te 5 -metal interfaces

Monolayer Ge Sb Te exhibits great potential in non-volatile memory technology due to its excellent electronic properties and phase-change characteristics, while the fundamental nature of Ge Sb Te -metal contacts has not been well understood yet. Here, we provide a comprehensive study of the electronic properties between monolayer Ge Sb Te and Pt, Pd, Au, Cu, Cr, Ag, and W contacts based on first-principles calculations. We find that the strong interaction interfaces formed between monolayer Ge Sb Te and Pt, Pd, Cr, and W contacts show chemical bonding and strong charge transfer. In contrast, no apparent chemical bonding and weak charge transfer are observed in the weak interaction interfaces formed with Au, Cu, and Ag. Additionally, our study reveals the presence of a pronounced Fermi level pinning effect between monolayer Ge Sb Te and metals, with pinning factors ofSn=0.325andSp=0.350. By increasing the interlayer distance, an effective transition from -type Ohmic contact to -type Schottky contact is facilitated because the band edge of Ge Sb Te is shifted upwards. Our study not only provides a theoretical basis for selecting suitable metal electrodes in Ge Sb Te -based devices but also holds significant implications for understanding Schottky barrier height modulation between semiconductors and metals.