Is Ba 3 In 2 O 6 a high- T c superconductor?

It has been suggested that Ba In O might be a high- superconductor. Experimental investigation of the properties of Ba In O was long inhibited by its instability in air. Recently epitaxial Ba In O with a protective capping layer was demonstrated, which finally allows its electronic characterization....

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Veröffentlicht in:Journal of physics. Condensed matter 2024-08, Vol.36 (31), p.315602
Hauptverfasser: Hensling, F V E, Dahliah, D, Smeaton, M A, Shrestha, B, Show, V, Parzyck, C T, Hennighausen, C, Kotsonis, G N, Rignanese, G-M, Barone, M R, Subedi, I, Disa, A S, Shen, K M, Faeth, B D, Bollinger, A T, Božović, I, Podraza, N J, Kourkoutis, L F, Hautier, G, Schlom, D G
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Sprache:eng
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Zusammenfassung:It has been suggested that Ba In O might be a high- superconductor. Experimental investigation of the properties of Ba In O was long inhibited by its instability in air. Recently epitaxial Ba In O with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba In O is determined to be 2.99 eV in-the (001) plane and 2.83 eV along the -axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. Neither - nor -site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba In O was successfully grown epitaxially on an epitaxial SrRuO bottom electrode. So far none of these efforts induced superconductivity in Ba In O leaving the answer to the initial question of whether Ba In O is a high- superconductor to be 'no' thus far.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/ad42f3