Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors
In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily a...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2021-07, Vol.54 (28), p.285104 |
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| creator | Yeh, Yu-Hsuan Chang, Ting-Chang Huang, Wei-Chen Zheng, Hao-Xuan Tsao, Yu-Ching Ciou, Fong-Min Lin, Yu-Shan Tan, Yung-Fang Sun, Li-Chuan Zhou, Kuan-Ju Chen, Kuan-Hsu Huang, Jen-Wei |
| description | In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily acquired by the extraction method. Further, different hot-carrier stress (HCS) conditions can be obtained based on the
I
G
–
V
G
curve, and the reliability tests can act as verification of the impact-ionization curve. In addition, electrical reliability tests indicate that the threshold voltage (
V
TH
) shift and on-state current (
I
on
) degradation in the MIS-HEMTs have a positive correlation to impact ionization-generated hole current. During HCS operation, the
V
TH
will shift positively and
I
on
decreases due to hot electrons trapping into the GaN layer. This model is validated by TCAD simulation. |
| doi_str_mv | 10.1088/1361-6463/abfad5 |
| format | Article |
| fullrecord | <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6463_abfad5</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>dabfad5</sourcerecordid><originalsourceid>FETCH-LOGICAL-c311t-5523bd3a1741df396614195086e2d20da21763f9432e559a4e52eab9e18275803</originalsourceid><addsrcrecordid>eNp1UMtqHDEQFCEGbza--6hTTh5bj9E8jmbJw2DwJTmLnpFmt41GWiTNYX3yP-QT8mf-EmvZJacEGvpR1UVRhFxzdstZ191x2fCqqRt5B8MERn0gq7-nj2TFmBCVbEV7ST6l9MwYU03HV-TP05ABPfotxXkPY6YYPL5ALq1Cb5bRGroLztJxidH6TIcDtc6OOeIIjs4W0hLtXJBE0dMtOIfLTD0WgrEFz-DeXn-jT4uDHGKZk51xDEftstMdbndnxeDpHAZ0mA80R_AJU2Gkz-RiApfs1bmvya9vX39uflSPT98fNveP1Sg5z5VSQg5GAm9rbibZNw2vea9Y11hhBDMgeNvIqa-lsEr1UFslLAy95Z1oVcfkmrCT7hhDStFOeh9xhnjQnOljyPqYqD4mqk8hl5cvpxcMe_0cluiLQW20qrXoSinOar0vbtbk5h_E_-q-A8FHkoQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Yeh, Yu-Hsuan ; Chang, Ting-Chang ; Huang, Wei-Chen ; Zheng, Hao-Xuan ; Tsao, Yu-Ching ; Ciou, Fong-Min ; Lin, Yu-Shan ; Tan, Yung-Fang ; Sun, Li-Chuan ; Zhou, Kuan-Ju ; Chen, Kuan-Hsu ; Huang, Jen-Wei</creator><creatorcontrib>Yeh, Yu-Hsuan ; Chang, Ting-Chang ; Huang, Wei-Chen ; Zheng, Hao-Xuan ; Tsao, Yu-Ching ; Ciou, Fong-Min ; Lin, Yu-Shan ; Tan, Yung-Fang ; Sun, Li-Chuan ; Zhou, Kuan-Ju ; Chen, Kuan-Hsu ; Huang, Jen-Wei</creatorcontrib><description>In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily acquired by the extraction method. Further, different hot-carrier stress (HCS) conditions can be obtained based on the
I
G
–
V
G
curve, and the reliability tests can act as verification of the impact-ionization curve. In addition, electrical reliability tests indicate that the threshold voltage (
V
TH
) shift and on-state current (
I
on
) degradation in the MIS-HEMTs have a positive correlation to impact ionization-generated hole current. During HCS operation, the
V
TH
will shift positively and
I
on
decreases due to hot electrons trapping into the GaN layer. This model is validated by TCAD simulation.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/1361-6463/abfad5</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>GaN ; hole current ; hot-carrier stress ; impact ionization ; MIS-HEMT</subject><ispartof>Journal of physics. D, Applied physics, 2021-07, Vol.54 (28), p.285104</ispartof><rights>2021 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c311t-5523bd3a1741df396614195086e2d20da21763f9432e559a4e52eab9e18275803</citedby><cites>FETCH-LOGICAL-c311t-5523bd3a1741df396614195086e2d20da21763f9432e559a4e52eab9e18275803</cites><orcidid>0000-0002-5301-6693</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6463/abfad5/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Yeh, Yu-Hsuan</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Huang, Wei-Chen</creatorcontrib><creatorcontrib>Zheng, Hao-Xuan</creatorcontrib><creatorcontrib>Tsao, Yu-Ching</creatorcontrib><creatorcontrib>Ciou, Fong-Min</creatorcontrib><creatorcontrib>Lin, Yu-Shan</creatorcontrib><creatorcontrib>Tan, Yung-Fang</creatorcontrib><creatorcontrib>Sun, Li-Chuan</creatorcontrib><creatorcontrib>Zhou, Kuan-Ju</creatorcontrib><creatorcontrib>Chen, Kuan-Hsu</creatorcontrib><creatorcontrib>Huang, Jen-Wei</creatorcontrib><title>Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily acquired by the extraction method. Further, different hot-carrier stress (HCS) conditions can be obtained based on the
I
G
–
V
G
curve, and the reliability tests can act as verification of the impact-ionization curve. In addition, electrical reliability tests indicate that the threshold voltage (
V
TH
) shift and on-state current (
I
on
) degradation in the MIS-HEMTs have a positive correlation to impact ionization-generated hole current. During HCS operation, the
V
TH
will shift positively and
I
on
decreases due to hot electrons trapping into the GaN layer. This model is validated by TCAD simulation.</description><subject>GaN</subject><subject>hole current</subject><subject>hot-carrier stress</subject><subject>impact ionization</subject><subject>MIS-HEMT</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1UMtqHDEQFCEGbza--6hTTh5bj9E8jmbJw2DwJTmLnpFmt41GWiTNYX3yP-QT8mf-EmvZJacEGvpR1UVRhFxzdstZ191x2fCqqRt5B8MERn0gq7-nj2TFmBCVbEV7ST6l9MwYU03HV-TP05ABPfotxXkPY6YYPL5ALq1Cb5bRGroLztJxidH6TIcDtc6OOeIIjs4W0hLtXJBE0dMtOIfLTD0WgrEFz-DeXn-jT4uDHGKZk51xDEftstMdbndnxeDpHAZ0mA80R_AJU2Gkz-RiApfs1bmvya9vX39uflSPT98fNveP1Sg5z5VSQg5GAm9rbibZNw2vea9Y11hhBDMgeNvIqa-lsEr1UFslLAy95Z1oVcfkmrCT7hhDStFOeh9xhnjQnOljyPqYqD4mqk8hl5cvpxcMe_0cluiLQW20qrXoSinOar0vbtbk5h_E_-q-A8FHkoQ</recordid><startdate>20210715</startdate><enddate>20210715</enddate><creator>Yeh, Yu-Hsuan</creator><creator>Chang, Ting-Chang</creator><creator>Huang, Wei-Chen</creator><creator>Zheng, Hao-Xuan</creator><creator>Tsao, Yu-Ching</creator><creator>Ciou, Fong-Min</creator><creator>Lin, Yu-Shan</creator><creator>Tan, Yung-Fang</creator><creator>Sun, Li-Chuan</creator><creator>Zhou, Kuan-Ju</creator><creator>Chen, Kuan-Hsu</creator><creator>Huang, Jen-Wei</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5301-6693</orcidid></search><sort><creationdate>20210715</creationdate><title>Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors</title><author>Yeh, Yu-Hsuan ; Chang, Ting-Chang ; Huang, Wei-Chen ; Zheng, Hao-Xuan ; Tsao, Yu-Ching ; Ciou, Fong-Min ; Lin, Yu-Shan ; Tan, Yung-Fang ; Sun, Li-Chuan ; Zhou, Kuan-Ju ; Chen, Kuan-Hsu ; Huang, Jen-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c311t-5523bd3a1741df396614195086e2d20da21763f9432e559a4e52eab9e18275803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>GaN</topic><topic>hole current</topic><topic>hot-carrier stress</topic><topic>impact ionization</topic><topic>MIS-HEMT</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yeh, Yu-Hsuan</creatorcontrib><creatorcontrib>Chang, Ting-Chang</creatorcontrib><creatorcontrib>Huang, Wei-Chen</creatorcontrib><creatorcontrib>Zheng, Hao-Xuan</creatorcontrib><creatorcontrib>Tsao, Yu-Ching</creatorcontrib><creatorcontrib>Ciou, Fong-Min</creatorcontrib><creatorcontrib>Lin, Yu-Shan</creatorcontrib><creatorcontrib>Tan, Yung-Fang</creatorcontrib><creatorcontrib>Sun, Li-Chuan</creatorcontrib><creatorcontrib>Zhou, Kuan-Ju</creatorcontrib><creatorcontrib>Chen, Kuan-Hsu</creatorcontrib><creatorcontrib>Huang, Jen-Wei</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yeh, Yu-Hsuan</au><au>Chang, Ting-Chang</au><au>Huang, Wei-Chen</au><au>Zheng, Hao-Xuan</au><au>Tsao, Yu-Ching</au><au>Ciou, Fong-Min</au><au>Lin, Yu-Shan</au><au>Tan, Yung-Fang</au><au>Sun, Li-Chuan</au><au>Zhou, Kuan-Ju</au><au>Chen, Kuan-Hsu</au><au>Huang, Jen-Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2021-07-15</date><risdate>2021</risdate><volume>54</volume><issue>28</issue><spage>285104</spage><pages>285104-</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>In this paper, an extraction method for measuring impact ionization-induced hole current in gallium nitride (GaN) metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) is proposed. The results show that the non-monotonic impact ionization current characteristic can be easily acquired by the extraction method. Further, different hot-carrier stress (HCS) conditions can be obtained based on the
I
G
–
V
G
curve, and the reliability tests can act as verification of the impact-ionization curve. In addition, electrical reliability tests indicate that the threshold voltage (
V
TH
) shift and on-state current (
I
on
) degradation in the MIS-HEMTs have a positive correlation to impact ionization-generated hole current. During HCS operation, the
V
TH
will shift positively and
I
on
decreases due to hot electrons trapping into the GaN layer. This model is validated by TCAD simulation.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6463/abfad5</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-5301-6693</orcidid></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | GaN hole current hot-carrier stress impact ionization MIS-HEMT |
| title | Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors |
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