Gamma- and x-ray accelerated tin whisker development

We observed accelerated whisker development in thin tin films under non-destructive gamma-ray and x-ray irradiation sources. The effect is mediated by charges induced in glass substrates supporting films, and becomes significant reaching the characteristic range of radiation doses of 20-30 kGy. We were able to change the radiation induced whisker growth rate by electrically disconnecting some parts of our experimental setup, thus demonstrating the electrostatic nature of the whisker development. Subject to additional qualification trials, the observed acceleration factors suggest that ionizing radiation can be used for accelerated whisker propensity testing.