Observation of linear magneto-resistance with small cross-over field at room temperature in bismuth

We report the observation of linear magneto-resistance (LMR) with a very low cross-over magnetic field (Bc) at room temperature in bismuth(110) thin films fabricated using thermal evaporation. The magneto-resistance at different temperatures (T) indicate that Bc has a strong T-dependence, and displays a remarkably small magnitude of 180 mT at T = 300 K. The parameter Φ, defined as the MR% (B = 1 T)/ Bc is 248, is considerably higher at room temperature compared to values previously reported in literature. The observed LMR is likely due to the recombination of carriers in compensated systems near charge neutrality. Our measurements demonstrate that the LMR can be observed at a very low field and high T, which can be utilized in a variety of applications.