Effect of nitrogen doping on glow-discharge amorphous silicon films
Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 -90% H 2 mixture are found to have electrical and optical properties similar to those made from 100% SiH 4 . The effect of nitrogen on the properties of these films is investigated. It is found that instead of behaving as a classica...
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| Veröffentlicht in: | Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties. Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1981-02, Vol.43 (2), p.357-363 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Amorphous silicon films prepared from a d.c. discharge of 10% SiH
4
-90% H
2
mixture are found to have electrical and optical properties similar to those made from 100% SiH
4
. The effect of nitrogen on the properties of these films is investigated. It is found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. |
|---|---|
| ISSN: | 1364-2812 0141-8637 1463-6417 |
| DOI: | 10.1080/13642818108221905 |