Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

The Metal-Ferroelectric-Insulator-Semiconductor FET structure (or MFISFET) has been studied as a non-volatile memory device 1-4 ever since the IEEE publication by Wu 4 in 1974. However, so far there has not been any commercial product, because of some severe problems, including interface problems an...

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Veröffentlicht in:Integrated ferroelectrics 1999-11, Vol.27 (1-4), p.9-18
Hauptverfasser: Han, Jin-Ping, Ma, T. P.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
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Zusammenfassung:The Metal-Ferroelectric-Insulator-Semiconductor FET structure (or MFISFET) has been studied as a non-volatile memory device 1-4 ever since the IEEE publication by Wu 4 in 1974. However, so far there has not been any commercial product, because of some severe problems, including interface problems and retention time problem, among others.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589908228451