Pulse switching characterization of organometallic chemical vapor deposited PbZr x Ti 1−x O 3 thin films for high-density memory applications
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| Veröffentlicht in: | Integrated ferroelectrics 1995-02, Vol.7 (1-4), p.123-138 |
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| Sprache: | eng |
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| container_end_page | 138 |
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| container_issue | 1-4 |
| container_start_page | 123 |
| container_title | Integrated ferroelectrics |
| container_volume | 7 |
| creator | Taylor, D. J. Larsen, P. K. Dormans, G. J. M. de Veirman, A. E.M |
| description | |
| doi_str_mv | 10.1080/10584589508220226 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1058-4587 |
| ispartof | Integrated ferroelectrics, 1995-02, Vol.7 (1-4), p.123-138 |
| issn | 1058-4587 1607-8489 |
| language | eng |
| recordid | cdi_crossref_primary_10_1080_10584589508220226 |
| source | Taylor & Francis:Master (3349 titles) |
| title | Pulse switching characterization of organometallic chemical vapor deposited PbZr x Ti 1−x O 3 thin films for high-density memory applications |
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