How to analyse relaxation and leakage currents of dielectric thin films: Simulation of voltage-step and voltage-ramp techniques
An empirical electrical equivalent circuit for dielectric thin films, based on experimental data, is developed. Current responses to voltage-steps and to voltage-ramps are calculated and compared with experimental data. The simulation allows us to separate current contributions of different physical...
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Veröffentlicht in: | Integrated ferroelectrics 1995-05, Vol.8 (3-4), p.317-332 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | An empirical electrical equivalent circuit for dielectric thin films, based on experimental data, is developed. Current responses to voltage-steps and to voltage-ramps are calculated and compared with experimental data. The simulation allows us to separate current contributions of different physical processes while the experiment only reveals the sum of the currents. |
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ISSN: | 1058-4587 1607-8489 |
DOI: | 10.1080/10584589508219666 |